TSM300NB06CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 6A/27A 8PDFN
$1.56
Available to order
Reference Price (USD)
2,500+
$0.24708
5,000+
$0.23856
Exquisite packaging
Discount
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Optimize your power electronics with the TSM300NB06CR RLG single MOSFET from Taiwan Semiconductor Corporation. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the TSM300NB06CR RLG combines cutting-edge technology with Taiwan Semiconductor Corporation's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5.2x5.75)
- Package / Case: 8-PowerLDFN
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