TSM60NB099CZ C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 38A TO220
$13.56
Available to order
Reference Price (USD)
1+
$6.60000
10+
$5.89700
100+
$4.83570
500+
$3.91578
1,000+
$3.30246
Exquisite packaging
Discount
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The TSM60NB099CZ C0G by Taiwan Semiconductor Corporation is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Taiwan Semiconductor Corporation for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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