TTA004B,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 160V 1.5A TO126N
$0.46
Available to order
Reference Price (USD)
1+
$0.50000
10+
$0.42000
25+
$0.36760
100+
$0.31500
250+
$0.27300
500+
$0.23100
1,000+
$0.17850
2,500+
$0.16275
5,000+
$0.15225
Exquisite packaging
Discount
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The TTA004B,Q from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the TTA004B,Q ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of TTA004B,Q and enhance your electronic projects with this top-quality component from Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 10 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126N
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