TTA008B,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER TRANSISTOR TO-126 PC=
$0.41
Available to order
Reference Price (USD)
1+
$0.40896
500+
$0.4048704
1000+
$0.4007808
1500+
$0.3966912
2000+
$0.3926016
2500+
$0.388512
Exquisite packaging
Discount
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Upgrade your electronic designs with the TTA008B,Q Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the TTA008B,Q is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Toshiba Semiconductor and Storage for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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