TTA1943(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 230V 15A TO3P
$2.78
Available to order
Reference Price (USD)
1+
$2.89000
10+
$2.61100
25+
$2.33120
100+
$2.09790
300+
$1.86480
500+
$1.63170
1,000+
$1.35198
2,500+
$1.25874
5,000+
$1.24320
Exquisite packaging
Discount
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Experience unmatched performance with the TTA1943(Q) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the TTA1943(Q) delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Toshiba Semiconductor and Storage for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 150 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
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