TTC5200(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 230V 15A TO3P
$2.78
Available to order
Reference Price (USD)
1+
$2.89000
10+
$2.61100
25+
$2.33120
100+
$2.09790
300+
$1.86480
500+
$1.63170
1,000+
$1.35198
2,500+
$1.25874
5,000+
$1.24320
Exquisite packaging
Discount
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Discover the TTC5200(Q) Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the TTC5200(Q) is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Toshiba Semiconductor and Storage for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 150 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
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