TW060N120C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 60MO
$20.79
Available to order
Reference Price (USD)
1+
$20.79000
500+
$20.5821
1000+
$20.3742
1500+
$20.1663
2000+
$19.9584
2500+
$19.7505
Exquisite packaging
Discount
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Upgrade your designs with the TW060N120C,S1F by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TW060N120C,S1F is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
- Vgs(th) (Max) @ Id: 5V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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