ULN2803AFWG,C,EL
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 8NPN DARL 50V 0.5A 18SOL
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Meet the ULN2803AFWG,C,EL Toshiba Semiconductor and Storage s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the ULN2803AFWG,C,EL demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Obsolete
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: 1.31W
- Frequency - Transition: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 18-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 18-SOP
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