UMC4N-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP PREBIAS SOT353
$0.16
Available to order
Reference Price (USD)
3,000+
$0.16448
6,000+
$0.15503
15,000+
$0.14558
30,000+
$0.14400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the UMC4N-7 by Diodes Incorporated, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the UMC4N-7 excels in automotive systems, power management modules, and communication devices. Diodes Incorporated's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose UMC4N-7 for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms, 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SOT-353
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