UMD3NTR
Rohm Semiconductor

Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.15W UMT6
$0.42
Available to order
Reference Price (USD)
3,000+
$0.08400
6,000+
$0.07560
15,000+
$0.06720
30,000+
$0.06300
75,000+
$0.05880
Exquisite packaging
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Discover the versatility of Rohm Semiconductor's UMD3NTR, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The UMD3NTR is widely used in IoT devices, medical equipment, and renewable energy systems. Rohm Semiconductor's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the UMD3NTR offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6