UPA1872BGR-9JG-E1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER, 10A, 20V, N-CH MOSFET
$0.73
Available to order
Reference Price (USD)
1+
$0.73000
500+
$0.7227
1000+
$0.7154
1500+
$0.7081
2000+
$0.7008
2500+
$0.6935
Exquisite packaging
Discount
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Discover the high-performance UPA1872BGR-9JG-E1-A from Renesas Electronics America Inc, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the UPA1872BGR-9JG-E1-A delivers unmatched performance. Trust Renesas Electronics America Inc's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 10V
- Power - Max: 2W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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