DMC3060LVT-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V-30V TSOT26
$0.13
Available to order
Reference Price (USD)
1+
$0.13031
500+
$0.1290069
1000+
$0.1277038
1500+
$0.1264007
2000+
$0.1250976
2500+
$0.1237945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMC3060LVT-13 by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the DMC3060LVT-13 provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-23-6
Related Products
Infineon Technologies
IRF7301TRPBF
Infineon Technologies
IPG20N04S4L08AATMA1
Vishay Siliconix
SI7900AEDN-T1-GE3
Diodes Incorporated
DMGD7N45SSD-13
Vishay Siliconix
SI4931DY-T1-GE3
Nexperia USA Inc.
2N7002BKS,115
Infineon Technologies
BSC0924NDIATMA1
Advanced Linear Devices Inc.
ALD1102SAL
Vishay Siliconix
SIZ730DT-T1-GE3
Infineon Technologies