BSC0924NDIATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 30V 17A/32A TISON8
$1.54
Available to order
Reference Price (USD)
5,000+
$0.49932
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the BSC0924NDIATMA1, a premium Transistors - FETs, MOSFETs - Arrays product from Infineon Technologies. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the BSC0924NDIATMA1 delivers consistent and reliable operation. Infineon Technologies's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A, 32A
- Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
Related Products
Advanced Linear Devices Inc.
ALD1102SAL
Vishay Siliconix
SIZ730DT-T1-GE3
Infineon Technologies
IPP120N04S3-02
onsemi
NTJD1155LT1G
onsemi
FDMS7620S
Rohm Semiconductor
QH8MA4TCR
Vishay Siliconix
SIA975DJ-T1-GE3
Fairchild Semiconductor
FDMS7606
Renesas Electronics America Inc
HAT2218R-EL-E
Fairchild Semiconductor