SI4931DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 12V 6.7A 8SOIC
$1.29
Available to order
Reference Price (USD)
2,500+
$0.47921
5,000+
$0.45671
12,500+
$0.44064
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the SI4931DY-T1-GE3 by Vishay Siliconix, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the SI4931DY-T1-GE3 ensures energy efficiency and robust performance. Vishay Siliconix's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6.7A
- Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Nexperia USA Inc.
2N7002BKS,115
Infineon Technologies
BSC0924NDIATMA1
Advanced Linear Devices Inc.
ALD1102SAL
Vishay Siliconix
SIZ730DT-T1-GE3
Infineon Technologies
IPP120N04S3-02
onsemi
NTJD1155LT1G
onsemi
FDMS7620S
Rohm Semiconductor
QH8MA4TCR
Vishay Siliconix
SIA975DJ-T1-GE3
Fairchild Semiconductor