UPA2727UT1A-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 16A 8DFN
$0.63
Available to order
Reference Price (USD)
1+
$0.63000
500+
$0.6237
1000+
$0.6174
1500+
$0.6111
2000+
$0.6048
2500+
$0.5985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the UPA2727UT1A-E1-AY by Renesas Electronics America Inc, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The UPA2727UT1A-E1-AY stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas Electronics America Inc.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
Related Products
Diodes Incorporated
DMP10H400SE-13
Vishay Siliconix
SIHG21N80AE-GE3
Sanken
2SK3003
onsemi
MMDF6N02HDR2
Fairchild Semiconductor
FDD8444L
Vishay Siliconix
IRFBC40ASPBF
IXYS
IXTP24N65X2M
Infineon Technologies
IPDD60R050G7XTMA1
IXYS
IXTH220N20X4
Vishay Siliconix