UPA2802T1L-E2-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 20V 18A 8DFN
$1.19
Available to order
Reference Price (USD)
1+
$1.19000
500+
$1.1781
1000+
$1.1662
1500+
$1.1543
2000+
$1.1424
2500+
$1.1305
Exquisite packaging
Discount
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Enhance your electronic projects with the UPA2802T1L-E2-AY single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's UPA2802T1L-E2-AY for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
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