US1J-E3/61T

Vishay General Semiconductor - Diodes Division

Manufacturer

Vishay General Semiconductor - Diodes Division

Description:

DIODE GEN PURP 600V 1A DO214AC

Datasheet:

US1J-E3/61T Datasheet

$0.40

Available to order

Reference Price (USD)

1,800+

$0.12198

3,600+

$0.11104

5,400+

$0.10557

12,600+

$0.09737

45,000+

$0.09190

90,000+

$0.08916

Exquisite packaging

Discount

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Discover the US1J-E3/61T single rectifier diode by Vishay General Semiconductor - Diodes Division, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The US1J-E3/61T is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Vishay General Semiconductor - Diodes Division's US1J-E3/61T for unmatched quality and performance in discrete semiconductor solutions.

Specifications

Product Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

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US1J-E3/61T

Reference Price (USD)

Specifications

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