VS-GT100DA120UF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 187A 890W SOT227
$42.71
Available to order
Reference Price (USD)
1+
$40.29000
10+
$37.59200
25+
$36.01600
100+
$32.63950
250+
$31.51400
Exquisite packaging
Discount
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Vishay General Semiconductor - Diodes Division's VS-GT100DA120UF represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the VS-GT100DA120UF in industrial servo drives or medium-voltage frequency converters. Trust Vishay General Semiconductor - Diodes Division's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 187 A
- Power - Max: 890 W
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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