VT6M1T2CR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N/P-CH 20V 0.1A VMT6
$0.43
Available to order
Reference Price (USD)
8,000+
$0.05580
16,000+
$0.04960
24,000+
$0.04650
56,000+
$0.04340
Exquisite packaging
Discount
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Choose the VT6M1T2CR from Rohm Semiconductor for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the VT6M1T2CR stands out for its reliability and efficiency. Rohm Semiconductor's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
- Power - Max: 120mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: VMT6
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