VT6X12T2R
Rohm Semiconductor
Rohm Semiconductor
NPN+NPN GENERAL PURPOSE AMPLIFIC
$0.00
Available to order
Reference Price (USD)
8,000+
$0.09894
16,000+
$0.09021
24,000+
$0.08439
56,000+
$0.08148
Exquisite packaging
Discount
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Meet the VT6X12T2R Rohm Semiconductor s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the VT6X12T2R demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 350MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: VMT6
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