W66BQ6NBUAFJ
Winbond Electronics
Winbond Electronics
2GB LPDDR4X, X16, 1600MHZ, -40C~
$5.84
Available to order
Reference Price (USD)
1+
$5.83951
500+
$5.7811149
1000+
$5.7227198
1500+
$5.6643247
2000+
$5.6059296
2500+
$5.5475345
Exquisite packaging
Discount
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The W66BQ6NBUAFJ Memory IC by Winbond Electronics is a state-of-the-art solution for data storage and retrieval. Belonging to the Memory category, this IC is engineered to provide high-speed access and large storage capacities, making it ideal for advanced electronic applications. Its robust design ensures durability and consistent performance.
Memory ICs, such as the W66BQ6NBUAFJ, are distinguished by their ability to handle large datasets efficiently. These components are essential for systems that demand quick and reliable memory operations. The W66BQ6NBUAFJ features advanced technology that minimizes latency and maximizes throughput, catering to high-performance requirements.
Applications of the W66BQ6NBUAFJ include data centers, wearable technology, and automotive infotainment systems. For instance, it is used in enterprise servers to support massive data processing and in smartwatches for efficient data management. The W66BQ6NBUAFJ is a reliable and high-performing Memory IC for various cutting-edge applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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