WNSC2D10650DJ
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE
$2.84
Available to order
Reference Price (USD)
1+
$2.84000
500+
$2.8116
1000+
$2.7832
1500+
$2.7548
2000+
$2.7264
2500+
$2.698
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic systems with the WNSC2D10650DJ single rectifier diode by WeEn Semiconductors. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The WNSC2D10650DJ is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose WeEn Semiconductors's WNSC2D10650DJ for advanced semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 310pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: 175°C
Related Products
Microchip Technology
JANS1N5822/TR
Yangzhou Yangjie Electronic Technology Co.,Ltd
SL16-F1-3000HF
Vishay General Semiconductor - Diodes Division
MBRF1060-E3/45
Nexperia USA Inc.
BAT54J,115
Comchip Technology
CDBA1200LR-HF
Vishay General Semiconductor - Diodes Division
VS-1ENH01-M3/84A
Panjit International Inc.
SB12AFC_R1_00001
Vishay General Semiconductor - Diodes Division
VS-ETH3006FP-M3
Microchip Technology
1N6077
Nexperia USA Inc.