WNSC6D20650CW6Q
WeEn Semiconductors
WeEn Semiconductors
DUAL SILICON CARBIDE SCHOTTKY DI
$5.53
Available to order
Reference Price (USD)
1+
$5.53000
500+
$5.4747
1000+
$5.4194
1500+
$5.3641
2000+
$5.3088
2500+
$5.2535
Exquisite packaging
Discount
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The WNSC6D20650CW6Q from WeEn Semiconductors sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. WeEn Semiconductors's rigorous quality control ensures the WNSC6D20650CW6Q maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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