XPH4R714MC,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 60A 8SOP
$1.85
Available to order
Reference Price (USD)
1+
$1.85000
500+
$1.8315
1000+
$1.813
1500+
$1.7945
2000+
$1.776
2500+
$1.7575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the XPH4R714MC,L1XHQ single MOSFET from Toshiba Semiconductor and Storage. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the XPH4R714MC,L1XHQ combines cutting-edge technology with Toshiba Semiconductor and Storage's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 132W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-SOIC (0.197", 5.00mm Width)
Related Products
STMicroelectronics
STW33N60M2
IXYS
IXTA26P20P-TRL
Infineon Technologies
IRFB7537PBF
Diodes Incorporated
DMN2991UTQ-13
Infineon Technologies
IPP50R299CPXKSA1
IXYS
IXFH6N120
Nexperia USA Inc.
PSMN2R7-30PL,127
Alpha & Omega Semiconductor Inc.
AOT600A60L
Vishay Siliconix
IRFR1N60APBF-BE3
Vishay Siliconix