DMN2991UTQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT523 T&R
$0.06
Available to order
Reference Price (USD)
1+
$0.06019
500+
$0.0595881
1000+
$0.0589862
1500+
$0.0583843
2000+
$0.0577824
2500+
$0.0571805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the DMN2991UTQ-13 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMN2991UTQ-13 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 280mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
Related Products
Infineon Technologies
IPP50R299CPXKSA1
IXYS
IXFH6N120
Nexperia USA Inc.
PSMN2R7-30PL,127
Alpha & Omega Semiconductor Inc.
AOT600A60L
Vishay Siliconix
IRFR1N60APBF-BE3
Vishay Siliconix
SI2309CDS-T1-GE3
Vishay Siliconix
SI4128DY-T1-GE3
STMicroelectronics
STLD200N4F6AG
Panjit International Inc.
PJQ5462A_R2_00001
Nexperia USA Inc.