XPH6R30ANB,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 45A 8SOP
$1.93
Available to order
Reference Price (USD)
1+
$1.93000
500+
$1.9107
1000+
$1.8914
1500+
$1.8721
2000+
$1.8528
2500+
$1.8335
Exquisite packaging
Discount
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Upgrade your designs with the XPH6R30ANB,L1XHQ by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the XPH6R30ANB,L1XHQ is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 132W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-SOIC (0.197", 5.00mm Width)
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