XPN7R104NC,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 20A 8TSON
$1.31
Available to order
Reference Price (USD)
1+
$1.31000
500+
$1.2969
1000+
$1.2838
1500+
$1.2707
2000+
$1.2576
2500+
$1.2445
Exquisite packaging
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The XPN7R104NC,L1XHQ from Toshiba Semiconductor and Storage redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the XPN7R104NC,L1XHQ offers the precision and reliability you need. Trust Toshiba Semiconductor and Storage to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta), 65W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
- Package / Case: 8-PowerVDFN
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