XPW4R10ANB,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 70A AEC-Q101
$2.43
Available to order
Reference Price (USD)
1+
$2.43000
500+
$2.4057
1000+
$2.3814
1500+
$2.3571
2000+
$2.3328
2500+
$2.3085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The XPW4R10ANB,L1XHQ from Toshiba Semiconductor and Storage sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Toshiba Semiconductor and Storage's XPW4R10ANB,L1XHQ for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 70A
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
- FET Feature: Standard
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IPU80R900P7AKMA1
onsemi
NTP5862NG
Infineon Technologies
IRF8302MTRPBF
IXYS
IXFA130N15X3
Diodes Incorporated
DMP2066LSN-7
Alpha & Omega Semiconductor Inc.
AON6284
PN Junction Semiconductor
P3M12080K4
Vishay Siliconix
SUM110P04-05-E3
Vishay Siliconix
SIHH21N65EF-T1-GE3
Vishay Siliconix