P3M12080K4
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 47A TO-247-4
$11.90
Available to order
Reference Price (USD)
1+
$11.90000
500+
$11.781
1000+
$11.662
1500+
$11.543
2000+
$11.424
2500+
$11.305
Exquisite packaging
Discount
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Meet the P3M12080K4 by PN Junction Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The P3M12080K4 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose PN Junction Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 47A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +21V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 221W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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