YJG95G06A-F1-0100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 95A PDFN5060-8L-
$1.62
Available to order
Reference Price (USD)
1+
$1.62000
500+
$1.6038
1000+
$1.5876
1500+
$1.5714
2000+
$1.5552
2500+
$1.539
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The YJG95G06A-F1-0100HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Yangzhou Yangjie Electronic Technology Co.,Ltd for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerLDFN
Related Products
Infineon Technologies
IPA028N08N3GXKSA1
Toshiba Semiconductor and Storage
TK12E60W,S1VX
IXYS
IXTH40N50L2
Vishay Siliconix
SI3430DV-T1-GE3
NXP USA Inc.
PMN50UPE,115
Toshiba Semiconductor and Storage
TK110P10PL,RQ
STMicroelectronics
STB28N60M2
onsemi
NTP35N15G
STMicroelectronics
STP10LN80K5
Microchip Technology