ZTX855STZ
Diodes Incorporated
Diodes Incorporated
TRANS NPN 150V 4A E-LINE
$0.46
Available to order
Reference Price (USD)
2,000+
$0.51770
Exquisite packaging
Discount
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Enhance your circuit designs with the ZTX855STZ Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The ZTX855STZ is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Power - Max: 1.2 W
- Frequency - Transition: 90MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
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