ZVN4206ASTZ
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 600MA E-LINE
$0.32
Available to order
Reference Price (USD)
2,000+
$0.34105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the ZVN4206ASTZ single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's ZVN4206ASTZ for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
Related Products
Texas Instruments
CSD17310Q5A
Vishay Siliconix
SI1442DH-T1-BE3
Vishay Siliconix
SIHG22N50D-E3
onsemi
NTMFS4C302NT1G
IXYS
IXTT02N450HV
IXYS
IXTT170N10P
IXYS
IXTA2N100P-TRL
onsemi
FDV304P
UnitedSiC
UJ4C075060K4S
Renesas Electronics America Inc