ZVN4310A
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 900MA TO92-3
$1.74
Available to order
Reference Price (USD)
1+
$1.85000
10+
$1.64600
100+
$1.32010
500+
$1.04424
1,000+
$0.84360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZVN4310A from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's ZVN4310A for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Related Products
Infineon Technologies
IPT60R065S7XTMA1
Rohm Semiconductor
RQ7E100ATTCR
Vishay Siliconix
SQ3418EV-T1_GE3
Infineon Technologies
IPAN80R280P7XKSA1
onsemi
MTA2N60E
Rohm Semiconductor
RV2C002UNT2L
Infineon Technologies
IPD050N03LGBTMA1
Alpha & Omega Semiconductor Inc.
AOTF360A70L
onsemi
FQD12N20LTM-F085P
NXP Semiconductors