RV2C002UNT2L
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 20V 180MA DFN1006-3
$0.40
Available to order
Reference Price (USD)
8,000+
$0.05800
16,000+
$0.04930
24,000+
$0.04640
56,000+
$0.04350
200,000+
$0.04060
Exquisite packaging
Discount
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The RV2C002UNT2L from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RV2C002UNT2L offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VML1006
- Package / Case: SC-101, SOT-883
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