ZX5T851ASTZ
Diodes Incorporated
Diodes Incorporated
TRANS NPN 60V 4.5A E-LINE
$1.15
Available to order
Reference Price (USD)
2,000+
$0.55110
6,000+
$0.52800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZX5T851ASTZ Bipolar Junction Transistor (BJT) by Diodes Incorporated is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the ZX5T851ASTZ provides consistent performance in demanding applications. Choose Diodes Incorporated for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4.5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
- Power - Max: 1 W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
Related Products
Infineon Technologies
BC847BE6433
onsemi
NSVMMBT5401WT1G
onsemi
PZT2907AT1G
Diodes Incorporated
ZXTN2010A
onsemi
MJE15035G
Central Semiconductor Corp
CMLT7820G TR PBFREE
Fairchild Semiconductor
BC556B
Yangzhou Yangjie Electronic Technology Co.,Ltd
BC857CW-F2-0000HF
NTE Electronics, Inc
NTE2309
Solid State Inc.