ZXMN10A07ZTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 1A SOT89-3
$0.66
Available to order
Reference Price (USD)
1,000+
$0.26910
2,000+
$0.24765
5,000+
$0.23335
10,000+
$0.21905
25,000+
$0.20904
50,000+
$0.20800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMN10A07ZTA from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the ZXMN10A07ZTA offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89-3
- Package / Case: TO-243AA
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