TK62N60W,S1VF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 61.8A TO247
$15.62
Available to order
Reference Price (USD)
1+
$14.87000
30+
$12.50600
120+
$11.49200
510+
$9.80200
1,020+
$9.46400
Exquisite packaging
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Discover the TK62N60W,S1VF from Toshiba Semiconductor and Storage, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TK62N60W,S1VF ensures reliable performance in demanding environments. Upgrade your circuit designs with Toshiba Semiconductor and Storage's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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