ZXMN10A08DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 100V 1.6A 8-SOIC
$0.91
Available to order
Reference Price (USD)
500+
$0.52492
1,000+
$0.41994
2,500+
$0.38057
5,000+
$0.35432
12,500+
$0.34120
25,000+
$0.33404
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMN10A08DN8TA by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the ZXMN10A08DN8TA provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.6A
- Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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