ZXTC2061E6TA
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 12V 5A/3.5A SOT23
$0.80
Available to order
Reference Price (USD)
3,000+
$0.34450
6,000+
$0.32350
15,000+
$0.32000
Exquisite packaging
Discount
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The ZXTC2061E6TA BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The ZXTC2061E6TA undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 5A, 3.5A
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 5A, 200mV @ 350mA, 3.5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 480 @ 1A, 2V / 290 @ 1A, 2V
- Power - Max: 1.1W
- Frequency - Transition: 260MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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