ZXTC6719MCTA
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 50V/40V 4A/3A 8DFN
$0.87
Available to order
Reference Price (USD)
3,000+
$0.37895
6,000+
$0.35585
15,000+
$0.35200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the ZXTC6719MCTA Diodes Incorporated s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the ZXTC6719MCTA demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 4A, 3A
- Voltage - Collector Emitter Breakdown (Max): 50V, 40V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A, 370mV @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V / 60 @ 1.5A, 2V
- Power - Max: 1.7W
- Frequency - Transition: 165MHz, 190MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: DFN3020B-8
Related Products
Diodes Incorporated
ZXTC2061E6TA
Nexperia USA Inc.
PBSS5230PAP,115
Infineon Technologies
SMBT3906SH6327XTSA1
Toshiba Semiconductor and Storage
2SA1873-Y(TE85L,F)
Diodes Incorporated
DMMT5551-7-F
Rohm Semiconductor
EMZ7T2R
Infineon Technologies
BC847PNH6433XTMA1
Nexperia USA Inc.
PBSS5260PAP,115
Diodes Incorporated
ZTD09N50DE6QTA
Nexperia USA Inc.