ZXTC6720MCTA
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 80V/70V 8DFN
$0.82
Available to order
Reference Price (USD)
3,000+
$0.33495
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXTC6720MCTA BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The ZXTC6720MCTA undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 3.5A, 2.5A
- Voltage - Collector Emitter Breakdown (Max): 80V, 70V
- Vce Saturation (Max) @ Ib, Ic: 340mV @ 300mA, 3.5A, 270mV @ 200mA, 1.5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 40 @ 1.5A, 5V
- Power - Max: 1.7W
- Frequency - Transition: 160MHz, 180MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: DFN3020B-8
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