ZXTN2005ZQTA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 25V 5.5A SOT89-3
$0.42
Available to order
Reference Price (USD)
1+
$0.42294
500+
$0.4187106
1000+
$0.4144812
1500+
$0.4102518
2000+
$0.4060224
2500+
$0.401793
Exquisite packaging
Discount
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Optimize your electronic systems with the ZXTN2005ZQTA Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the ZXTN2005ZQTA delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5.5 A
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 150mA, 6.5A
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
- Power - Max: 1.5 W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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