ZXTN619MATA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 50V 4A DFN2020B-3
$0.56
Available to order
Reference Price (USD)
3,000+
$0.21930
6,000+
$0.20670
15,000+
$0.19410
30,000+
$0.19200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the ZXTN619MATA Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the ZXTN619MATA delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 3 W
- Frequency - Transition: 165MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN
- Supplier Device Package: DFN2020B-3
Related Products
Nexperia USA Inc.
BC847BQC-QZ
Nexperia USA Inc.
BC807-40QC-QZ
Nexperia USA Inc.
BC807-40HVL
Diodes Incorporated
ZTX696B
Microchip Technology
2N3719
NXP USA Inc.
PDTA114EE/DG115
onsemi
2SC3956E
Fairchild Semiconductor
KSC2883YTF
NXP USA Inc.
PDTD123EQA147
Toshiba Semiconductor and Storage