
Transistors - FETs, MOSFETs - RF
Transistors - FETs, MOSFETs - RF
Definition:
Transistors - FETs (Field-Effect Transistors), MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) - RF (Radio Frequency) are specialized semiconductor devices designed for high-frequency signal amplification and switching in RF applications. These components are optimized for performance in wireless communication, radar systems, satellite technology, and other high-frequency circuits, offering low noise, high gain, and efficient power handling.
Types of Products in This Category:
This classification includes a variety of RF-optimized transistors, such as:
- RF FETs: Designed for low-noise amplification in high-frequency circuits.
- RF MOSFETs: Provide high-power efficiency and thermal stability for RF power amplification.
- LDMOS (Laterally Diffused MOSFETs): Ideal for high-power RF applications like base stations and broadcast systems.
- GaN (Gallium Nitride) FETs/MOSFETs: Deliver superior high-frequency performance and power density for advanced RF systems.
- HEMT (High Electron Mobility Transistors): Used in millimeter-wave and microwave applications due to their high-speed switching capabilities.
Purchasing Recommendations:
When selecting RF FETs or MOSFETs, consider the following factors:
- Frequency Range: Ensure the device supports the required operating frequency (e.g., UHF, VHF, microwave).
- Power Handling: Match the transistor s power rating (e.g., wattage) with your application s demands.
- Noise Figure (NF): Critical for receiver circuits; lower NF ensures better signal clarity.
- Package Type: Choose between surface-mount (SMD) or through-hole based on PCB design requirements.
- Supplier Reliability: Opt for reputable manufacturers (e.g., Infineon, Qorvo, NXP) to ensure consistent performance and longevity.
This category is essential for engineers and designers working on cutting-edge RF systems, where precision, efficiency, and signal integrity are paramount.
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BF1100WR,115
MOSFET N-CH 14V 30MA SOT343R
CLF1G0060S-10U
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF10H6600PSU
RF FET LDMOS 110V 20.8DB SOT539B
BLC2425M8LS300PZ
RF FET LDMOS 65V 17DB SOT12501
BLP8G21S-160PVY
RF FET LDMOS 65V 17DB SOT12211
GTRA362802FC-V1-R0
280W, GAN HEMT, 48V, 3400-3600MH
BLF2425M9LS30J
RF FET LDMOS 65V 18.5DB SOT1135B
BLF189XRBU
RF MOSFET SOT539 TRAY
BLS9G2934L-400U
RF MOSFET LDMOS 32V SOT502A
BLF7G10L-250,112
RF PFET, 1-ELEMENT, ULTRA HIGH F
WPGM1517050
RF GAN HEMT MMIC 2pcs/pack
GTRA263902FC-V2-R0
390W, GAN HEMT, 48V, 2496-2690MH
BLF882U
RF FET LDMOS 104V 20.6DB SOT502A
BLP10H603Z
RF FET LDMOS 104V 22DB 12VDFN
BLF2425M8LS140U
RF FET LDMOS 65V 19DB SOT502B
GTRA262802FC-V2-R2
280W, GAN HEMT, 48V, 2496-2690MH
PTFC270101M-V1-R1K
RFP-LD10M
BLF8G22LS-270V,112
RF FET LDMOS 65V 17.3DB SOT1244B
BLF188XRSU
RF FET LDMOS 135V 24.4DB SOT539B
BLF647PSJ
RF FET LDMOS 65V 17DB SOT1121B