
Transistors - FETs, MOSFETs - RF
Transistors - FETs, MOSFETs - RF
Definition:
Transistors - FETs (Field-Effect Transistors), MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) - RF (Radio Frequency) are specialized semiconductor devices designed for high-frequency signal amplification and switching in RF applications. These components are optimized for performance in wireless communication, radar systems, satellite technology, and other high-frequency circuits, offering low noise, high gain, and efficient power handling.
Types of Products in This Category:
This classification includes a variety of RF-optimized transistors, such as:
- RF FETs: Designed for low-noise amplification in high-frequency circuits.
- RF MOSFETs: Provide high-power efficiency and thermal stability for RF power amplification.
- LDMOS (Laterally Diffused MOSFETs): Ideal for high-power RF applications like base stations and broadcast systems.
- GaN (Gallium Nitride) FETs/MOSFETs: Deliver superior high-frequency performance and power density for advanced RF systems.
- HEMT (High Electron Mobility Transistors): Used in millimeter-wave and microwave applications due to their high-speed switching capabilities.
Purchasing Recommendations:
When selecting RF FETs or MOSFETs, consider the following factors:
- Frequency Range: Ensure the device supports the required operating frequency (e.g., UHF, VHF, microwave).
- Power Handling: Match the transistor s power rating (e.g., wattage) with your application s demands.
- Noise Figure (NF): Critical for receiver circuits; lower NF ensures better signal clarity.
- Package Type: Choose between surface-mount (SMD) or through-hole based on PCB design requirements.
- Supplier Reliability: Opt for reputable manufacturers (e.g., Infineon, Qorvo, NXP) to ensure consistent performance and longevity.
This category is essential for engineers and designers working on cutting-edge RF systems, where precision, efficiency, and signal integrity are paramount.
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CGHV1F025S
RF MOSFET HEMT 40V 12DFN
BLA6H1011-600,112
RF FET LDMOS 100V 17DB SOT539A
PTRA087008NB-V1-R2
700W, SI LDMOS, 48V, 790-820MHZ,
MMRF1305HSR5
FET RF 2CH 133V 512MHZ NI780S-4
IGN2729M400R2
GAN, RF POWER TRANSISTOR, S-BAND
MRF151A
FET RF N-CH 50V 150W P-244
BLF574,112
RF FET LDMOS 110V 26.5DB SOT539A
BLU6H0410L-600P,11
RF FET LDMOS 110V 21DB SOT539A
BLF8G10LS-270GV,12
RF FET LDMOS 65V 19.5DB SOT1244C
VRF151
MOSFET RF PWR N-CH 50V 150W M174
MRF175LU
FET RF 65V 400MHZ 333-04
BLL6H1214-500,112
RF FET LDMOS 100V 17DB SOT539A
BLF9G38LS-90PJ
RF FET LDMOS 65V 15DB SOT1121B
ON5173118
NOW NEXPERIA ON5173 0, D2PAK
PTVA042502FC-V1-R0
IC AMP RF LDMOS H-37248-4
SD57045
FET RF 65V 945MHZ M243
BLF8G10LS-160,112
RF PFET, 1-ELEMENT, ULTRA HIGH F
2SK3749(91)-T1-A
SMALL SIGNAL FET
BLM8D1822S-50PBY
RF MOSFET LDMOS 28V 16-HSOPF
BLF7G24LS-140,112
RF MOSFET LDMOS 28V SOT502B