
Transistors - FETs, MOSFETs - RF
Transistors - FETs, MOSFETs - RF
Definition:
Transistors - FETs (Field-Effect Transistors), MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) - RF (Radio Frequency) are specialized semiconductor devices designed for high-frequency signal amplification and switching in RF applications. These components are optimized for performance in wireless communication, radar systems, satellite technology, and other high-frequency circuits, offering low noise, high gain, and efficient power handling.
Types of Products in This Category:
This classification includes a variety of RF-optimized transistors, such as:
- RF FETs: Designed for low-noise amplification in high-frequency circuits.
- RF MOSFETs: Provide high-power efficiency and thermal stability for RF power amplification.
- LDMOS (Laterally Diffused MOSFETs): Ideal for high-power RF applications like base stations and broadcast systems.
- GaN (Gallium Nitride) FETs/MOSFETs: Deliver superior high-frequency performance and power density for advanced RF systems.
- HEMT (High Electron Mobility Transistors): Used in millimeter-wave and microwave applications due to their high-speed switching capabilities.
Purchasing Recommendations:
When selecting RF FETs or MOSFETs, consider the following factors:
- Frequency Range: Ensure the device supports the required operating frequency (e.g., UHF, VHF, microwave).
- Power Handling: Match the transistor s power rating (e.g., wattage) with your application s demands.
- Noise Figure (NF): Critical for receiver circuits; lower NF ensures better signal clarity.
- Package Type: Choose between surface-mount (SMD) or through-hole based on PCB design requirements.
- Supplier Reliability: Opt for reputable manufacturers (e.g., Infineon, Qorvo, NXP) to ensure consistent performance and longevity.
This category is essential for engineers and designers working on cutting-edge RF systems, where precision, efficiency, and signal integrity are paramount.
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BLA9H0912L-250GU
BLA9H0912L-250G/SOT502/TRAY
MCH6406-TL-E
NCH 4V DRIVE SERIES
GTVA262701FA-V2-R0
270W, GAN HEMT, 48V, 2496-2690MH
TAV1-331+
RF MOSFET D-PHEMT 4V TE2769
PD55015-E
FET RF 40V 500MHZ PWRSO-10
BLF6G22LS-40P,118
RF FET LDMOS 65V 19DB SOT1121B
MRF8HP21080HR5
RF POWER N-CHANNEL, MOSFET
CPH5846-TL-E
PCH+SBD 1.8V DRIVE SERIES
BLL6H0514-25,112
RF FET LDMOS 100V 21DB SOT467C
2SJ266-DL-E
PCH 4V DRIVE SERIES
SD2942W
IC TRANS RF HF/VHF/UHF M244
2SK3617-E
NCH 4V DRIVE SERIES
BLU6H0410LS-600P,1
RF FET LDMOS 110V 21DB SOT539B
MCH6608-TL-E
NCH+NCH 2.5V DRIVE SERIES
TAV-581+
RF MOSFET E-PHEMT 3V FG873
BLF9G20LS-160VJ
RF FET LDMOS 65V 19.8DB SOT1120B
BLF8G22LS-240J
RF FET LDMOS 65V 19DB SOT502B
BLP7G22-10Z
RF FET LDMOS 65V 16DB 12VDFN
CGH35015F
15W GAN HEMT 28V 6.0GHZ FLANGE
AFT21H350W03SR6
FET RF 2CH 65V 2.11GHZ NI1230S