2N3501
Solid State Inc.
Solid State Inc.
BI-POLAR SILICON TRANSISTOR NPN
$0.50
Available to order
Reference Price (USD)
1+
$8.23000
10+
$7.40600
25+
$6.74800
100+
$6.08970
250+
$5.59596
500+
$5.10222
1,000+
$4.44386
Exquisite packaging
Discount
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Discover the 2N3501, a cutting-edge RF Bipolar Junction Transistor (BJT) from Solid State Inc., part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The 2N3501 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Solid State Inc. for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 150V
- Frequency - Transition: 150MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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