BF776H6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, NPN
$0.16
Available to order
Reference Price (USD)
1+
$0.16000
500+
$0.1584
1000+
$0.1568
1500+
$0.1552
2000+
$0.1536
2500+
$0.152
Exquisite packaging
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The BF776H6327 RF Bipolar Junction Transistor (BJT) by Infineon Technologies is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the BF776H6327 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Infineon Technologies for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 46GHz
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
- Gain: 24dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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