BFU550WX
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT323-3
$0.86
Available to order
Reference Price (USD)
3,000+
$0.19189
6,000+
$0.17951
15,000+
$0.16713
30,000+
$0.16465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BFU550WX by NXP USA Inc. is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the BFU550WX from NXP USA Inc., a leader in semiconductor innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
- Gain: 18dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
Related Products
Toshiba Semiconductor and Storage
2SC5066-O,LF
NXP USA Inc.
BFU790F,115
Toshiba Semiconductor and Storage
2SC2714-O(TE85L,F)
NXP USA Inc.
BFU910FX
Toshiba Semiconductor and Storage
MT3S111(TE85L,F)
MACOM Technology Solutions
MRF317
CEL
NE68039R-T1
onsemi
15GN03F-TL-E
Fairchild Semiconductor
PN3563
NTE Electronics, Inc