BFU660F,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 5.5V 21GHZ 4DFP
$0.67
Available to order
Reference Price (USD)
3,000+
$0.20686
6,000+
$0.19351
15,000+
$0.18016
30,000+
$0.17794
Exquisite packaging
Discount
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Upgrade your RF circuits with the BFU660F,115, a high-efficiency Bipolar Junction Transistor (BJT) from NXP USA Inc.. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The BFU660F,115 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose NXP USA Inc. for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.5V
- Frequency - Transition: 21GHz
- Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
- Gain: 12dB ~ 21dB
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 2V
- Current - Collector (Ic) (Max): 60mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: 4-DFP
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